? 2005 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 30 a, v ge = 15 v t j = 25 c 2.2 2.7 v t j = 150 c 2.0 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c40a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 80 a (rbsoa) clamped inductive load @ 600 v p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s plastic body 200 c m d mounting torque (m3) 1.13/10nm/lb.in. weight to-247 6 g to-268 4 g ds99042c(10/05) to-268 (ixgt) c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 (ixgh) e c (tab) features z very high frequency igbt z square rbsoa z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z very fast switching speeds for high frequency applications v ces = 600 v i c25 = 75 a v ce(sat) = 2.7 v t fi typ = 32 ns hiperfast tm igbt c2-class high speed igbts g ixgh 40n60c2 ixgt 40n60c2
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 40n60c2 ixgt 40n60c2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs i c = 30 a; v ce = 10 v, 20 36 s pulse test, t 300 s, duty cycle 2 % c ies 2500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 180 pf c res 54 pf q g 95 nc q ge i c = 30 a, v ge = 15 v, v ce = 300 v 14 nc q gc 36 nc t d(on) 18 ns t ri 20 ns t d(off) 90 140 ns t fi 32 ns e off 0.20 0.37 mj t d(on) 18 ns t ri 20 ns e on 0.3 mj t d(off) 130 ns t fi 80 240 ns e off 0.50 mj r thjc 0.42 k/w r thck (to-247) 0.25 k/w inductive load, t j = 25 c i c = 30 a, v ge = 15 v v ce = 400 v, r g = r off = 3 inductive load, t j = 125 c i c = 30 a, v ge = 15 v v ce = 400 v, r g = r off = 3 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-268 outline min. recommended footprint (dimensions in inches and mm) ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2005 ixys all rights reserved ixgh 40n60c2 ixgt 40n60c2 fi g . 2. extended output characteristics @ 25 deg. c 0 30 60 90 12 0 15 0 18 0 210 0123 4567 v c e - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 9v 5v 7v fi g . 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 5v 7v 9v fi g . 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 0.511.522.533.5 v c e - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 7v 5v 9v fig. 6. input admittance 0 30 60 90 12 0 15 0 18 0 210 45678910 v g e - volts i c - amperes t j = 1 25 o c 25 o c -40 o c fig. 4. temperature dependence of v ce(sat) 0.6 0.7 0.8 0.9 1 1. 1 1. 2 1. 3 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalize d i c = 60a i c = 30a i c = 1 5a v g e = 1 5v fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 1. 5 2 2.5 3 3.5 4 56 78 9101112131415 v g e - volts v c e - volts t j = 25 o c i c = 60a 30a 1 5 a
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 40n60c2 ixgt 40n60c2 fig. 12. capacitance 10 10 0 10 0 0 10 0 0 0 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 m hz fig. 11. gate charge 0 3 6 9 12 15 0 20406080100 q g - nanocoulombs v g e - volts v c e = 300v i c = 30a i g = 1 0m a fi g . 7. transconductance 0 10 20 30 40 50 60 70 0 306090120150180 i c - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 8. dependence of e off on r g 0 0.2 0.4 0.6 0.8 1 1 .2 1 .4 1 .6 1 .8 24681 01 21 41 6 r g - ohms e off - millijoules i c = 45a i c = 1 5a t j = 1 25 o c v g e = 1 5v v c e = 400v i c = 30a i c = 60a fig. 10. dependence of e off on temperature 0 0.2 0.4 0.6 0.8 1 1. 2 1. 4 1. 6 25 50 75 100 125 t j - degrees centigrade e off - millijoules i c = 60a v g e = 1 5v v c e = 400v r g = 3 ohm s r g = 1 0 ohm s - - - - - i c = 45a i c = 30a i c = 1 5a fig. 9. dependence of e off on i c 0 0.2 0.4 0.6 0.8 1 1. 2 1. 4 1. 6 10 20 30 40 50 60 i c - amperes e off - millijoules r g = 3 ohms r g = 1 0 ohms - - - - - v g e = 1 5v v c e = 400v t j = 1 25 o c t j = 25 o c
? 2005 ixys all rights reserved fig. 13. maximum transient thermal resistance 0 0.1 0.2 0.3 0.4 0.5 1 10 100 1000 pu ls e w idth - millis ec onds r (th) j c - (oc/w) ixgh 40n60c2 ixgt 40n60c2
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